Electrical Properties of HfO<sub>2</sub> Thin Insulating Film Prepared by Anodic Oxidation.

YANAGISAWA H; KAMIJYO M; SHINKAI S; SASAKI K; ABE Y; YAMANE M

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J-GLOBAL ID：200902135399659218 Reference number：02A0698066

Electrical Properties of HfO₂ Thin Insulating Film Prepared by Anodic Oxidation.

陽極酸化により作製したHfO₂絶縁薄膜の電気的性質

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Author (6)： , , , , ,
Material：
Volume： 41 Issue： 8 Page： 5284-5287 Publication year： Aug. 15, 2002
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Ferroelectrics,antiferroelectrics and ferroelasticity , Oxide thin films , Metal-insulator-metal structures

Reference (12)：

1) J. M. Schoen, R. C. Pitetti and D. Jaffe: J. Electrochem. Soc. 119 (1972) 1215.
2) M. H. Rottersman, M. J. Bill and D. Gerstenberg: IEEE Trans. Components, Hybrids & Manuf. Technol. <B>1</B> (1978) 137.
3) K. Sasaki, K. Hirata, A. Noya and T. Umezawa: Trans. IEICE Electron. J73-C-II (1990) 643 [in Japanese].
4) K. Sasaki, M. Yamane, Y. Abe and A. Noya: Trans. IEICE Electron. J78-C-II (1995) 113 [in Japanese].
5) Japanese Industrial Standard: JIS C 5101; 1998.

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Electrical Properties of HfO2 Thin Insulating Film Prepared by Anodic Oxidation.

Electrical Properties of HfO₂ Thin Insulating Film Prepared by Anodic Oxidation.