Homogeneous In<sub>0.3</sub>Ga<sub>0.7</sub>As crystal growth by the traveling liquidus-zone method.

KINOSHITA K; KATO H; IWAI M; TSURU T; MURAMATSU Y; YODA S

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J-GLOBAL ID：200902135710150790 Reference number：01A0621086

Homogeneous In_0.3Ga_0.7As crystal growth by the traveling liquidus-zone method.

液相線領域の移動法による均一なIn_0.3Ga_0.7Asの結晶成長

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Author (6)： , , , , ,
Material：
Volume： 225 Issue： 1 Page： 59-66 Publication year： May. 2001
JST Material Number： B0942A ISSN： 0022-0248 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Crystal growth of semiconductors

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Homogeneous In0.3Ga0.7As crystal growth by the traveling liquidus-zone method.

Homogeneous In_0.3Ga_0.7As crystal growth by the traveling liquidus-zone method.