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J-GLOBAL ID:200902135710150790   Reference number:01A0621086

Homogeneous In0.3Ga0.7As crystal growth by the traveling liquidus-zone method.

液相線領域の移動法による均一なIn0.3Ga0.7Asの結晶成長
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Volume: 225  Issue:Page: 59-66  Publication year: May. 2001 
JST Material Number: B0942A  ISSN: 0022-0248  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Crystal growth of semiconductors 
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