Art
J-GLOBAL ID:200902135851435365   Reference number:01A0398241

Ion-beam stimulated solid-phase crystallization of amorphous Si on SiO2.

SiO2上の非晶質Siのイオンビーム刺激固相結晶化
Author (4):
Material:
Volume: 383  Issue: 1/2  Page: 104-106  Publication year: Feb. 15, 2001 
JST Material Number: B0899A  ISSN: 0040-6090  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=01A0398241&from=J-GLOBAL&jstjournalNo=B0899A") }}
JST classification (2):
JST classification
Category name(code) classified by JST.
Semiconductor thin films  ,  Irradiational changes semiconductors 
Terms in the title (6):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page