Art
J-GLOBAL ID:200902137108728806
Reference number:02A0501694
Fluoride Resonant Tunneling Diodes Co-integrated with Si-MOSFETs.
Si-MOSFETを用いて同時集積したふっ化物共鳴トンネルダイオード
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Author (3):
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Material:
Volume:
41
Issue:
4B
Page:
2598-2601
Publication year:
Apr. 30, 2002
JST Material Number:
G0520B
ISSN:
0021-4922
Document type:
Article
Article type:
原著論文
Country of issue:
Japan (JPN)
Language:
ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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JST classification (4):
JST classification
Category name(code) classified by JST.
Metal-insulator-semiconductor structures
, Diodes
, Transistors
, Semiconductor integrated circuit
Reference (14):
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1) P. Mazumber, S. Kulkarni, M. Bhattacharya, J. P. Sun and G. I. Haddad: Proc. IEEE 86 (1998) 4.
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2) K. Morita, H. Sorada, K. Morimoto, K. Yuki, S. Yoshii, M. Niwa, T. Uenoyama and K. Ohnaka: Absr. Device Research Conf. 1998, p. 42-13.
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3) K. Ismail, B. S. Meyerson and P. J. Wang: Appl. Phys. Lett. 59 (1991) 973.
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4) S. Yamaguchi, A. Meguro and Y. Suda: Ext. Absr. the 2001 Int. Conf. Solid State Devices and Materials (Business Center for Academic Societies Japan, Tokyo, 2001) p. 582.
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5) K. Yuki, Y. Hirai, K. Morimoto, K. Inoue, M. Niwa and J. Yasui: Jpn. J. Appl. Phys. 34 (1995) 860.
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Terms in the title (5):
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