Art

J-GLOBAL ID：200902138178551012   Reference number：00A0544447

Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique.

AFM/Kelvinプローブ法によって検出したSi量子ドットの荷電状態

Author (6)： SHIMIZU N (Hiroshima Univ., Hiroshima, JPN) ,  IKEDA M (Hiroshima Univ., Hiroshima, JPN) ,  YOSHIDA E (Hiroshima Univ., Hiroshima, JPN) ,  MURAKAMI H (Hiroshima Univ., Hiroshima, JPN) ,  MIYAZAKI S (Hiroshima Univ., Hiroshima, JPN) ,  HIROSE M (Hiroshima Univ., Hiroshima, JPN)
Material： Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)
Volume： 39  Issue： 4B  Page： 2318-2320  Publication year： Apr. 30, 2000 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *quantum dot ,...

   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=00A0544447&from=J-GLOBAL&jstjournalNo=G0520B") }}

JST classification (1)： Metal-insulator-semiconductor structures  (BM03085X)

Reference (9)：

• 1) M. Fukuda, K. Nakagawa, S. Miyazaki and M. Hirose: Appl. Phys. Lett. 70 (1997) 2291.
• 2) S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crrab and K. Chan: Appl. Phys. Lett. 68 (1996) 1377.
• 3) A. Kohno, H. Murakami, M. Ikeda, H. Nishiyama, S. Miyazaki and M. Hirose: Ext. Abstr. 1998 Int. Conf. Solid State Devices and Materials (Business Center for Academic Societies Japan, Tokyo, 1998) p. 174.
• 4) Y. Takahashi, A. Fujiwara, K. Yamazaki, H. Namatu, K. Kurihara and K. Murase: Ext. Abstr. 1998 Int. Conf. Solid State Devices and Materials (Business Center for Academic Societies Japan, Tokyo, 1998) p. 176.
• 5) K. Nakagawa, M. Fukuda, S. Miyazaki and M. Hirose: Mater. Res. Soc. Symp. Proc. 452 (1997) 243.

Terms in the title (5)： AFM ,  Kelvinプローブ ,  Si ,  量子ドット ,  荷電状態