Art
J-GLOBAL ID:200902140291155969
Reference number:96A0443695
Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits.
金属-酸化物-半導体の大規模集積回路中のゲート酸化物欠陥の起源としての八面体構造の巨大析出物
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Author (5):
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Material:
Volume:
35
Issue:
2B
Page:
812-817
Publication year:
Feb. 1996
JST Material Number:
G0520B
ISSN:
0021-4922
Document type:
Article
Article type:
原著論文
Country of issue:
Japan (JPN)
Language:
ENGLISH (EN)
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JST classification (1):
JST classification
Category name(code) classified by JST.
Semiconductor integrated circuit
Reference (34):
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NAKAJIMA, O. Ext.Abstr.(The 26th Spring Meeting, Mar.1979). Japan Soc.of Appl.Phys. 30p-R-1, 512
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ITSUMI, M. Ext.Abstr.(The 27th Spring Meeting, Mar.1980). Japan Soc.of Appl.Phys. 3p-E-1, 553
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ITSUMI, M. Appl.Phys.Lett. 1982, 40, 496
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KIYOSUMI, F. Oki Denki Kenkyu Kaihatu. 1982, 49, 25, 3, 25
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KIYOSUMI, F. Denshi-Tsushin Gakkai, Gijutsu Kenkyu Houkoku, SSD 83-66. 1983, 1
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