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J-GLOBAL ID:200902140291155969   Reference number:96A0443695

Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits.

金属-酸化物-半導体の大規模集積回路中のゲート酸化物欠陥の起源としての八面体構造の巨大析出物
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Volume: 35  Issue: 2B  Page: 812-817  Publication year: Feb. 1996 
JST Material Number: G0520B  ISSN: 0021-4922  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Semiconductor integrated circuit 
Reference (34):
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  • ITSUMI, M. Ext.Abstr.(The 27th Spring Meeting, Mar.1980). Japan Soc.of Appl.Phys. 3p-E-1, 553
  • ITSUMI, M. Appl.Phys.Lett. 1982, 40, 496
  • KIYOSUMI, F. Oki Denki Kenkyu Kaihatu. 1982, 49, 25, 3, 25
  • KIYOSUMI, F. Denshi-Tsushin Gakkai, Gijutsu Kenkyu Houkoku, SSD 83-66. 1983, 1
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