Barrier-Height Imaging of Oxygen-adsorbed Si(001)2×1 and Ge(001)2×1 Surfaces.

KUROKAWA S; YAMASHITA H; YOSHIKAWA J; SAKAI A

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J-GLOBAL ID：200902140698699424 Reference number：99A0662217

Barrier-Height Imaging of Oxygen-adsorbed Si(001)2×1 and Ge(001)2×1 Surfaces.

酸素吸着Si(001)2×1及びGe(001)2×1表面の障壁高さの画像化

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Volume： 38 Issue： 6B Page： 3845-3848 Publication year： Jun. 30, 1999
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Study of adsorption by physical means , Surface structure of semiconductors

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(5) J. S. Villarrubia and J. J. Boland: Phys. Rev. Lett. 63 (1989) 306.

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