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J-GLOBAL ID:200902141458732960   Reference number:00A1061589

Two-step growth of high-quality GaN by hydride vapor-phase epitaxy.

水素化物気相エピタクシー法による高品質GaNの二段階成長
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Volume: 77  Issue: 12  Page: 1804-1806  Publication year: Sep. 18, 2000 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor thin films 
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