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J-GLOBAL ID:200902141683561023   Reference number:02A0276221

Reduction method for low-frequency noise of GaAs junction field-effect transistor at a cryogenic temperature.

GaAs接合形電界効果トランジスタの極低温における低周波雑音の低減方法
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Volume: 80  Issue: 10  Page: 1844-1846  Publication year: Mar. 11, 2002 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Semiconductor-semiconductor contacts with Gr.13-15 element compounds  ,  Transistors 
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