Art
J-GLOBAL ID：200902141683561023   Reference number：02A0276221

Reduction method for low-frequency noise of GaAs junction field-effect transistor at a cryogenic temperature.

GaAs接合形電界効果トランジスタの極低温における低周波雑音の低減方法
Author (3)：
FUJIWARA M

About FUJIWARA M

(Communications Res. Lab., Tokyo, JPN)

About Communications Res. Lab., Tokyo, JPN

, 
SASAKI M

About SASAKI M

(Communications Res. Lab., Tokyo, JPN)

About Communications Res. Lab., Tokyo, JPN

, 
AKIBA M

About AKIBA M

(Communications Res. Lab., Tokyo, JPN)

About Communications Res. Lab., Tokyo, JPN


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 80  Issue： 10  Page： 1844-1846  Publication year： Mar. 11, 2002 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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*gallium arsenide

About gallium arsenide

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Semiconductor-semiconductor contacts with Gr.13-15 element compounds 
(BM03082Y)

About Semiconductor-semiconductor contacts with Gr.13-15 element compounds

,  Transistors 
(NC03070N)

About Transistors

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
GaAs

About GaAs

, 
電界効果トランジスタ

About 電界効果トランジスタ

, 
極低温

About 極低温

, 
低周波雑音

About 低周波雑音


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