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J-GLOBAL ID:200902142532138290   Reference number:99A0369562

Low dielectric constant films prepared by plasma-enhanced chemical vapor deposition from tetramethylsilane.

テトラメチルシランからのプラズマ支援化学気相蒸着による低誘電率膜
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Material:
Volume: 85  Issue:Page: 3314-3318  Publication year: Mar. 15, 1999 
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Dielectrics in general  ,  Oxide thin films 
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