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J-GLOBAL ID:200902143219280383
Reference number:98A0293252
Full-Multiple-Scattering Approach to L3 X-Ray Absorption Near Edge Structures of Amorphous Germanium.
非晶質ゲルマニウムのL3X線吸収端近傍構造に対する完全多重散乱アプローチ
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Author (3):
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Material:
Volume:
37
Issue:
1
Page:
230-233
Publication year:
Jan. 1998
JST Material Number:
G0520B
ISSN:
0021-4922
Document type:
Article
Article type:
原著論文
Country of issue:
Japan (JPN)
Language:
ENGLISH (EN)
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Category name(code) classified by JST.
Structure of amorphous semiconductors
Reference (10):
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1) G. Etherington, A. C. Wright, J. T. Wenzel, J. C. Dore, J. H. Clarke and R. N. Sinclair: J. Non-Cryst. Solids 48 (1982) 2645.
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2) N. Takeuchi and L. Garzon: Solid State Commun. 98 (1996) 591.
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3) E. A. Stern, C. E. Bouldin, B. von Roeden and J. Azoulay: Phys. Rev. B 27 (1983) 6557.
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4) F. Evangelisti, M. G. Proietti, A. Balzarotti, F. Comin, L. Incoccia and S. Mobilio: Solid State Commun. 37 (1981) 413.
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5) S. Naoe, H. Abe, K. Fukui, T. Matsukawa and T. Murata: Proc. 7th Int. Conf. X-ray Absorption Fine Structure, Jpn. J. Appl. Phys. 32 (1992) Suppl. 32-2, p. 794.
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