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J-GLOBAL ID：200902143522302209   Reference number：99A0921499

GaN/AlGaN distributed Bragg reflectorを用いたInGaN MQW LEDの高性能化

Author (6)：
NAKADA NAOYUKI

About NAKADA NAOYUKI

(名古屋工大)

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, 
NAKAJI MASAHARU

About NAKAJI MASAHARU

(名古屋工大)

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, 
ISHIKAWA HIROYASU

About ISHIKAWA HIROYASU

(名古屋工大)

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, 
EGAWA TAKASHI

About EGAWA TAKASHI

(名古屋工大)

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, 
JIMBO TAKASHI

About JIMBO TAKASHI

(名古屋工大)

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, 
UMENO MASAYOSHI

About UMENO MASAYOSHI

(名古屋工大)

About 名古屋工大


Material：
電子情報通信学会大会講演論文集  (電子情報通信学会ソサイエティ大会講演論文集)

About 電子情報通信学会大会講演論文集


Volume： 1999  Issue： ソサイエティ C1  Page： 253  Publication year： Aug. 16, 1999 
JST Material Number： G0508A  ISSN： 1349-1369  Document type： Proceedings
Article type： 短報  Country of issue： Japan (JPN)  Language： JAPANESE (JA)
Thesaurus term：
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gallium nitride

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,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
DBR【反射器】

About DBR【反射器】


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JST classification (1)：
JST classification
Category name(code) classified by JST.
Light emitting devices 
(NC03082G)

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Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
GaN

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, 
AlGaN

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, 
InGaN

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, 
MQW

About MQW

, 
LED

About LED

, 
高性能化

About 高性能化


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