Rchr
J-GLOBAL ID:200901046166029943
Update date: Sep. 24, 2024
Ishikawa Hiroyasu
イシカワ ヒロヤス | Ishikawa Hiroyasu
Affiliation and department:
Research field (1):
Crystal engineering
Research theme for competitive and other funds (1):
- 2009 - 2010 Heteroepitaxial growth of GaN on Silicon spheres and its application for high power light emitting diodes
Papers (94):
MISC (1):
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SANO Yoshiaki, KAIFU Katsuaki, MITA Juro, YAMADA Tomoyuki, MAKITA Takehiko, SAGIMORI Tomohiko, OKITA hideyuki, ISHIKAWA Hiroyasu, EGAWA Takashi, JIMBO Takashi. High-Frequency Property of AIGaN/GaN-HEMT with Recessed Gate. IEICE transactions on electronics. 2003. 86. 4. 687-688
Books (1):
-
MOCVD法によるSi(110)基板上へのGaNの成長
2009
Lectures and oral presentations (237):
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Properties of TiN-doped amorphous carbon thin fims
(2024)
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Properties of Stannic Oxide-doped amorphous carbon thin films
(2024)
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光電変換素子に向けたRFマグネトロンスパッタリング法によるInN薄膜の作製
(2023)
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RFマグネトロンスパッタリング法によるCu3N薄膜作製における微量酸素の影響
(2023)
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Cu2O変換CuOおよびCuOに対するLi2Oを用いたCuO薄膜のLiドーピング
(2023)
more...
Education (1):
- 1995 - 1998 Nagoya Institute of Technology Graduate School of Engineering Electrical & Computer Engineering
Professional career (1):
Work history (9):
- 2014/04 - 現在 Shibaura Institute of Technology College of Engineering, Department of Electronic Engineering Professor
- 2009/04 - 2013/03 Shibaura Institute of Technology College of Engineering, Department of Electronic Engineering
- 2008/04 - 2009/03 Nagoya Institute of Technology Graduate School of Engineering Engineering Physics, Electronics and Mechanics
- 2006/04 - 2008/03 Nagoya Institute of Technology Graduate School of Engineering Environmental Technology & Urban Planning
- 2005/05 - 2006/03 Nagoya Institute of Technology Graduate School of Engineering Environmental Technology & Urban Planning
- 2005/04 - 2005/04 Nagoya Institute of Technology
- 2004/04 - 2005/03 Nagoya Institute of Technology
- 2003/04 - 2004/03 Nagoya Institute of Technology
- 1998/04 - 2003/03 Nagoya Institute of Technology
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