Rchr
J-GLOBAL ID:200901046166029943   Update date: Sep. 24, 2024

Ishikawa Hiroyasu

イシカワ ヒロヤス | Ishikawa Hiroyasu
Affiliation and department:
Research field  (1): Crystal engineering
Research theme for competitive and other funds  (1):
  • 2009 - 2010 Heteroepitaxial growth of GaN on Silicon spheres and its application for high power light emitting diodes
Papers (94):
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MISC (1):
  • SANO Yoshiaki, KAIFU Katsuaki, MITA Juro, YAMADA Tomoyuki, MAKITA Takehiko, SAGIMORI Tomohiko, OKITA hideyuki, ISHIKAWA Hiroyasu, EGAWA Takashi, JIMBO Takashi. High-Frequency Property of AIGaN/GaN-HEMT with Recessed Gate. IEICE transactions on electronics. 2003. 86. 4. 687-688
Books (1):
  • MOCVD法によるSi(110)基板上へのGaNの成長
    2009
Lectures and oral presentations  (237):
  • Properties of TiN-doped amorphous carbon thin fims
    (2024)
  • Properties of Stannic Oxide-doped amorphous carbon thin films
    (2024)
  • 光電変換素子に向けたRFマグネトロンスパッタリング法によるInN薄膜の作製
    (2023)
  • RFマグネトロンスパッタリング法によるCu3N薄膜作製における微量酸素の影響
    (2023)
  • Cu2O変換CuOおよびCuOに対するLi2Oを用いたCuO薄膜のLiドーピング
    (2023)
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Education (1):
  • 1995 - 1998 Nagoya Institute of Technology Graduate School of Engineering Electrical & Computer Engineering
Professional career (1):
  • 博士(工学) (名古屋工業大学)
Work history (9):
  • 2014/04 - 現在 Shibaura Institute of Technology College of Engineering, Department of Electronic Engineering Professor
  • 2009/04 - 2013/03 Shibaura Institute of Technology College of Engineering, Department of Electronic Engineering
  • 2008/04 - 2009/03 Nagoya Institute of Technology Graduate School of Engineering Engineering Physics, Electronics and Mechanics
  • 2006/04 - 2008/03 Nagoya Institute of Technology Graduate School of Engineering Environmental Technology & Urban Planning
  • 2005/05 - 2006/03 Nagoya Institute of Technology Graduate School of Engineering Environmental Technology & Urban Planning
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