Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire.

DIMITROV R; MURPHY M; SMART J; SCHAFF W; SHEALY J R; EASTMAN L F; AMBACHER O; STUTZMANN M

Art

J-GLOBAL ID：200902144682317551 Reference number：00A0437039

Two-dimensional electron gases in Ga-face and N-face AlGaN/GaN heterostructures grown by plasma-induced molecular beam epitaxy and metalorganic chemical vapor deposition on sapphire.

サファイア上にプラズマ誘起分子線エピタクシー法および有機金属化学蒸着法で成長させたGa面およびN面AlGaN/GaNヘテロ構造における二次元電子ガス

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Material：
Volume： 87 Issue： 7 Page： 3375-3380 Publication year： Apr. 01, 2000
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Solid-state plasmas , Semiconductor thin films

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