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J-GLOBAL ID：200902145029071292   Reference number：98A0950509

Voltage Shift Effect on Retention Failure in Ferroelectric Memories.

強誘電体メモリの記憶保持故障に及ぼす電圧シフトの影響

Author (5)： NAKAO K (Matsushita Electronics Corp., Osaka, JPN) ,  JUDAI Y (Matsushita Electronics Corp., Kyoto, JPN) ,  AZUMA M (Matsushita Electronics Corp., Osaka, JPN) ,  SHIMADA Y (Matsushita Electronics Corp., Osaka, JPN) ,  OTSUKI T (Matsushita Electronics Corp., Osaka, JPN)
Material： Japanese Journal of Applied Physics. Part 1. Regular Papers, Short Notes & Review Papers  (Japanese Journal of Applied Physics. Part 1. Regular Papers, Brief Communications & Review Papers)
Volume： 37  Issue： 9B  Page： 5203-5206  Publication year： Sep. 1998 
JST Material Number： G0520B  ISSN： 0021-4922  Document type： Article
Article type： 短報  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *DRAM ,...
Semi thesaurus term： accelerated test ,...

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JST classification (1)： Semiconductor integrated circuit  (NC03162T)

Reference (9)：

• 1) J. F. Scott and C. A. Paz de Araujo: Science 246 (1989) 1400.
• 2) K. Asari, H. Hirano, T. Honda, T. Sumi, M. Takeo, N. Moriwaki, G. Nakane, T. Nakakuma, S. Chaya, T. Mukunoki, Y. Judai, M. Azuma, Y. Shimada and T. Otsuki: IEICE Trans. Electron. E81-C (1998) 488.
• 3) T. D. Hadnagy and D. J. Sheldon: Integr. Ferroelectr. 4 (1994) 217.
• 4) Y. Shimada, M. Azuma, K. Nakao, S. Chaya, N. Moriwaki and T. Otsuki: Jpn. J. Appl. Phys. 36 (1997) 5912
• 5) T. Mihara, H. Watanabe, C. A. Paz de Araujo, J. D. Cuchiaro, M. Scott and L. D. McMillan: Proc. 4th Int. Symp. Integrated Ferroelectrics, Monterey (1992) p. 137.

Terms in the title (4)： 強誘電体メモリ ,  記憶保持 ,  故障 ,  電圧シフト