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J-GLOBAL ID：200902145322320795   Reference number：01A0605518

Gas phase crystal growth of pure and SbI₃ doped Bi₂Te₃.

無添加およびSbI₃添加Bi₂Te₃の気相成長

Author (5)： OHSUGI I J (Salesian Polytechnic, Tokyo, JPN) ,  KOJIMA T (Salesian Polytechnic, Tokyo, JPN) ,  KAIBE H T (Komatsu Ltd., Kanagawa, JPN) ,  SHIOTA I (Kogakuin Univ., Tokyo, JPN) ,  NISHIDA I A (Kogakuin Advanced Materials Center, Tokyo, JPN)
Material： Journal of Advanced Science  (J Adv Sci)
Volume： 12  Issue： 4  Page： 375-378  Publication year： 2000 
JST Material Number： L0590A  ISSN： 0915-5651  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *bismuth compound ,...
Semi thesaurus term： carrier ,...

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JST classification (2)： Crystal growth of semiconductors  (BK13040X) ,  Crystal structure of metal oxides and chalcogenides  (BK07020Y)

Reference (9)：

• ROWE, D. M. Modem Thermoelectrics. 1983
• Natl. Bur. Stand. (U.S.) Monogr. 1964, 25, 316
• NAKAJIMA, S. J. Phys. Chem. Solids. 1963, 24, 479
• KAIBE, H. Eighth International Conference on Thermoelectric Energy Conversion, 1989. 1989, 195
• OHSUGI, I. J. Functionally Graded Materials 1996. 1996, 509

Terms in the title (1)： 気相成長