Art
J-GLOBAL ID：200902145583649727   Reference number：00A0726012

Reproducible switching effect in thin oxide films for memory applications.

酸化物薄膜の再現性あるスイッチング効果とメモリへの応用
Author (5)：
BECK A

About BECK A

(IBM Res., Rueschlikon, CEH)

About IBM Res., Rueschlikon, CEH

, 
BEDNORZ J G

About BEDNORZ J G

(IBM Res., Rueschlikon, CEH)

About IBM Res., Rueschlikon, CEH

, 
GERBER C

About GERBER C

(IBM Res., Rueschlikon, CEH)

About IBM Res., Rueschlikon, CEH

, 
ROSSEL C

About ROSSEL C

(IBM Res., Rueschlikon, CEH)

About IBM Res., Rueschlikon, CEH

, 
WIDMER D

About WIDMER D

(IBM Res., Rueschlikon, CEH)

About IBM Res., Rueschlikon, CEH


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 77  Issue： 1  Page： 139-141  Publication year： Jul. 03, 2000 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
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perovskite type crystal

About perovskite type crystal

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Metal-insulator-metal structures 
(BM03087F)

About Metal-insulator-metal structures

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
酸化物薄膜

About 酸化物薄膜

, 
再現性

About 再現性

, 
スイッチング効果

About スイッチング効果

, 
応用

About 応用


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