TP 2.1: A 3.3V 128Mb Multi-Level NAND Flash Memory for Mass Storage Applications.

JUNG T-S; CHOI Y-J; SUH K-D; KIM J-K; LIM Y-H; KOH Y-N; KIM J-R; LEE J-H; LIM H-K

Art

J-GLOBAL ID：200902145947839977 Reference number：96A0797041

TP 2.1: A 3.3V 128Mb Multi-Level NAND Flash Memory for Mass Storage Applications.

大容量記憶装置用3.3V・128Mb多値NANDフラッシュメモリ

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Material：
Volume： 39 Page： 32-33,412 Publication year： Feb. 1996
JST Material Number： D0753A ISSN： 0193-6530 Document type： Proceedings
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor integrated circuit , Memory units

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