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J-GLOBAL ID:200902146070421484   Reference number:04A0714278

Laser Operation in TlInGaAs/InP Double Hetrostructures

波長集積・操作フォトニクス-光スペクトル資源の極限利用に向けて-温度不感発振波長化のためのTlInGaAs/InPレーザ
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Material:
Page: 25-28  Publication year: 2002 
JST Material Number: N20041681  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Semiconductor lasers  ,  Luminescence of semiconductors 

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