Electroluminescence, photoluminescence, and photocurrent studies of Si/SiGe p-i-n heterostructures.

FOERSTER M; MANTZ U; RAMMINGER S; THONKE K; SAUER R; KIBBEL H; SCHAEFFLER F; HERZOG H-J

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J-GLOBAL ID：200902147080541263 Reference number：96A0795745

Electroluminescence, photoluminescence, and photocurrent studies of Si/SiGe p-i-n heterostructures.

Si/SiGep-i-nヘテロ構造のエレクトロルミネセンス,光ルミネセンス,および光電流

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Material：
Volume： 80 Issue： 5 Page： 3017-3023 Publication year： Sep. 01, 1996
JST Material Number： C0266A ISSN： 0021-8979 CODEN： JAPIAU Document type： Article
Article type：原著論文 Country of issue： United States (USA) Language： ENGLISH (EN)

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Luminescence of semiconductors , Semiconductor-semiconductor contacts without Gr.13-15 element compounds

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