Art
J-GLOBAL ID：200902147996397788
Reference number：97A0806619
Analysis of Schottky Barrier Heights of Metal/SiC Contacts and Its Possible Application to High-Voltage Rectifying Devices.
金属/SiC接触のSchottky障壁高さの分析と,その高電圧整流素子への応用可能性
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Author (2)：
,
Material：
Volume：
162
Issue：
1
Page：
389-408
Publication year：
Jul. 16, 1997
JST Material Number：
D0774A
ISSN：
0031-8965
Document type：
Article
Article type：
文献レビュー
Country of issue：
Germany, Federal Republic of (DEU)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Semiconductor-metal contacts
, Diodes
Terms in the title (7)：
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