Art
J-GLOBAL ID：200902149449562424
Reference number：99A0326729
GaAs Single Electron Transistors Fabricated by Selective Area Metalorganic Vapor Phase Epitaxy and Their Application to Single Electron Logic Circuits.
選択領域有機金属気相エピタクシーにより作製したGaAs単一電子トランジスタとその単一電子論理回路への応用
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Author (4)：
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Material：
Volume：
38
Issue：
1B
Page：
415-417
Publication year：
Jan. 30, 1999
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
Thesaurus term：
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Semiconductor-semiconductor contacts with Gr.13-15 element compounds
, Transistors
Reference (11)：
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(1) K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B.J. Vartanian and J. Harris: Appl. Phys. Lett. 68 (1996) 34.
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(2) K.K. Likharev: IEEE Trans. Magn. MAG-23 (1987) 1142.
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(3) K. Nakazato, R.J. Blaikie and H. Ahmed: J. Appl. Phys. 75 (1994) 5123.
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(4) K. Kumakura, K. Nakakoshi, J. Motohisa, T. Fukui and H. Hasegawa: Jpn. J. Appl. Phys. 34 (1995) 4387.
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(5) M. Aoki, H. Sano, M. Suzuki, M. Takahashi, K. Uomi and A. Takai: Electron. Lett. 27 (1991) 2138.
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Terms in the title (7)：
Terms in the title
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