Art
J-GLOBAL ID：200902150363725515
Reference number：97A0775306
Nano-Fabrication on GaAs Surface by Resist Process with Scanning Tunneling Microscope Lithography.
走査型トンネル顕微鏡リソグラフィーを用いたレジスト過程によるGaAs表面上のナノ加工
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Author (4)：
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Material：
Volume：
36
Issue：
6B
Page：
3839-3843
Publication year：
Jun. 1997
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Surface structure of semiconductors
Reference (5)：
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1) T. Fayfield and T. K. Higman: J. Vac. Sci. & Technol. <b> B12</b> (1994) 3731
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2) N. Kramer, H. Birk, J. Jorritsma and C. Schönenberger: Appl. Phys. Lett. 66 (1995) 1325
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3) C. Van Haesendonck, L. Stockman, G. Strunk and Y. Bruynseraede: J. Vac. Sci. & Technol. <b> B13</b> (1995) 1290
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4) J. P. Ibe, P. P. Bey, Jr., S. L. Brandow, R. A. Brizzolara, N. A. Burnham, D. P. DiLella, K. P. Lee, C. R. K. Marrian and R. J. Colton: J. Vac. Sci. & Technol. <b> A8</b> (1990) 3570
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5) T. M. Mayer, D. P. Adams and B. M. Marder: J. Vac. Sci. & Technol. <b> B14</b> (1996) 2438
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