Preparation and Dielectric Properties of SrBi2Ta2O9 Thin Films by Sol-Gel Method.

HAYASHI T; HARA T; TAKAHASHI H

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J-GLOBAL ID：200902150620856600 Reference number：97A1019200

Preparation and Dielectric Properties of SrBi₂Ta₂O₉ Thin Films by Sol-Gel Method.

ゾル-ゲル法によるSrBi₂Ta₂O₉薄膜の作製と誘電特性

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Volume： 36 Issue： 9B Page： 5900-5903 Publication year： Sep. 1997
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Oxide thin films , Ferroelectrics,antiferroelectrics and ferroelasticity

Reference (6)：

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2) I. Koiwa, T. Kanehara, J. Mita, T. Iwabuchi and T. Osaka: Ext. Abstr. 1996 Int. Conf. Solid State Devices and Materials (Business Center for Academic Societies Japan, Tokyo, 1996) p. 628.
3) T. Hayashi, H. Takahashi and T. Hara: Jpn. J. Appl. Phys. 35 (1996) 4952
4) D. C. Bradley, R. C. Mehrotra and D. P. Gaur: Metal Alkoxide (Academic Press Inc., London, 1978) Chap. 5, p. 319.
5) S. Katayama and M. Sekine: J. Mater. Res. 6 (1991) 36.

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