High-quality Ge epilayers on Si with low threading-dislocation densities.

LUAN H-C; LIM D R; LEE K K; CHEN K M; SANDLAND J G; WADA K; KIMERLING L C

Art

J-GLOBAL ID：200902150832154222 Reference number：00A0001742

High-quality Ge epilayers on Si with low threading-dislocation densities.

低い貫通転位密度のSi上の高品質Geエピ層

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Author (7)： , , , , , ,
Material：
Volume： 75 Issue： 19 Page： 2909-2911 Publication year： Nov. 08, 1999
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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