Art
J-GLOBAL ID：200902151024316114   Reference number：00A0397939

Suppression of Gate Leakage Current in n-AlGaAs/GaAs Power HEMTs.

n-AlGaAs/GaAs電力HEMTにおけるゲート漏れ電流の抑制
Author (3)：
NAGAYAMA A

About NAGAYAMA A

(Japan Radio Co., Ltd., Saitama, JPN)

About Japan Radio Co., Ltd., Saitama, JPN

, 
YAMAUCHI S

About YAMAUCHI S

(Ibaraki Univ., Ibaraki, JPN)

About Ibaraki Univ., Ibaraki, JPN

, 
HARIU T

About HARIU T

(Ibaraki Univ., Ibaraki, JPN)

About Ibaraki Univ., Ibaraki, JPN


Material：
IEEE Transactions on Electron Devices  (IEEE Trans Electron Devices)

About IEEE Transactions on Electron Devices


Volume： 47  Issue： 3  Page： 517-522  Publication year： Mar. 2000 
JST Material Number： C0222A  ISSN： 0018-9383  CODEN： IETDAI  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
*HEMT

About HEMT

,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=00A0397939&from=J-GLOBAL&jstjournalNo=C0222A") }}
JST classification (1)：
JST classification
Category name(code) classified by JST.
Transistors 
(NC03070N)

About Transistors

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
AlGaAs

About AlGaAs

, 
GaAs

About GaAs

, 
電力HEMT

About 電力HEMT

, 
ゲート漏れ電流

About ゲート漏れ電流


Return to Previous Page

TOP

BOTTOM