Role of Si<sub>1-x</sub>Ge<sub>x</sub> buffer layer on mobility enhancement in a strained-Si n-channel metal-oxide-semiconductor field-effect transistor.

SUGII N; NAKAGAWA K; YAMAGUCHI S; MIYAO M

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J-GLOBAL ID：200902151463528900 Reference number：00A0001755

Role of Si_1-xGe_x buffer layer on mobility enhancement in a strained-Si n-channel metal-oxide-semiconductor field-effect transistor.

歪んだSi-nチャネル金属-酸化物-半導体電界効果トランジスタにおける移動度増大に対するSi_1-xGe_xバッファ層の役割

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Volume： 75 Issue： 19 Page： 2948-2950 Publication year： Nov. 08, 1999
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Metal-insulator-semiconductor structures , Transistors

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Role of Si1-xGex buffer layer on mobility enhancement in a strained-Si n-channel metal-oxide-semiconductor field-effect transistor.

Role of Si_1-xGe_x buffer layer on mobility enhancement in a strained-Si n-channel metal-oxide-semiconductor field-effect transistor.