Rchr
J-GLOBAL ID：200901054803270709
Update date: Jan. 17, 2024
Nakagawa Kiyokazu
ナカガワ キヨカズ | Nakagawa Kiyokazu
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Homepage URL (1)：
http://www.inorg.yamanashi.ac.jp/ccst/laboratories/nakagawa-lab/main.htm
Research field (3)：
Electronic devices and equipment
, Crystal engineering
, Applied materials
Research keywords (14)：
Germanium
, Silicon
, Device
, Heterostructure
, ゲルマニウム
, シリコン
, デバイス
, ヘテロ構造
, Formation of Si-related semiconductor heterostructure and its application to devices
, Semiconductor
, 4族半導体へテロ構造形成と素子応用
, 半導体
, 電子デバイス・電子機器
, 応用物性・結晶工学
Research theme for competitive and other funds (4)：
Formation of SiGe Heterostructure and its Application to Devices
SiGeヘテロ構造形成と素子応用
Research on formation of Si-related hetero-structure and its application to devices
Research on formation of Si-related heterostructure and its application to devices
MISC (127)：
Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Noritaka Usami, Kazuo Nakajima. Crystalline morphologies of step-graded SiGe layers grown on exact and vicinal (1 1 0) Si substrates. Journal of Crystal Growth. 2009. 311. 3. 809-813
Y. Hoshi, K. Sawano, Y. Hiraoka, Y. Sato, Y. Ogawa, A. Yamada, N. Usami, K. Nakagawa, Y. Shiraki. Fabrication of thin strain-relaxed SiGe buffer layers with high Ge composition by ion implantation method. JOURNAL OF CRYSTAL GROWTH. 2009. 311. 3. 825-828
Keisuke Arimoto, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami, Kazuo Nakajima, Kentarou Sawano, Yasuhiro Shiraki. Strain relaxation mechanisms in step-graded SiGe/Si(110) heterostructures grown by gas-source MBE at high temperatures. JOURNAL OF CRYSTAL GROWTH. 2009. 311. 3. 819-824
Keisuke Arimoto, Genki Kawaguchi, Kana Shimizu, Masato Watanabe, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami, Kazuo Nakajima, Kentarou Sawano, Yasuhiro Shiraki. Structural and transport properties of strained SiGe grown on V-groove patterned Si(110) substrates. JOURNAL OF CRYSTAL GROWTH. 2009. 311. 3. 814-818
K. Sawano, Y. Hoshi, Y. Hiraoka, N. Usami, K. Nakagawa, Y. Shiraki. Local control of strain in SiGe by ion-implantation technique. JOURNAL OF CRYSTAL GROWTH. 2009. 311. 3. 806-808
ｍore...
Patents (3)：
電界効果トランジスタおよびその製造方法
歪み緩和膜の製造方法、および、歪み緩和膜を有する積層体
半導体表面の研磨法、半導体デバイスの製造方法および半導体デバイス
Lectures and oral presentations (107)：
選択的イオン注入法によりSiGe層に導入される一軸性歪み状態の線幅依存性
(第56回応用物理学関係連合講演会 2009)
As+イオン注入したSi-C混晶半導体薄膜のRTA処理による組織変化
(第56回応用物理学関係連合講演会 2009)
μ波プラズマ加熱による金属の選択加熱現象を利用した多結晶シリコン形成技術2
(第56回応用物理学関係連合講演会 2009)
マイクロ波プラズマ加熱による非晶質酸化チタン薄膜の結晶化
(第56回応用物理学関係連合講演会 2009)
メタン凝縮層の低速電子線衝撃による炭素薄膜の極低温合成(II)
(第56回応用物理学関係連合講演会 2009)
ｍore...
Education (4)：
- 1981 東京大学大学院
- 1981 The University of Tokyo Graduate School, Division of Engineering
- 1976 The University of Tokyo
- 1976 The University of Tokyo Faculty of Engineering
Professional career (1)：
Doctor of Engineering (The University of Tokyo)
Work history (7)：
2000/04 - University of Yamanashi Faculty of Engineering
1989 - 2000 Central Research Laboratory, Hitachi, Ltd.
1981 - 1989 Central Research Laboratory, Hitachi, Ltd.
1981/04 - 日立製作所中央研究所入所
Senior Researcher
Researcher
University of Yamanashi Department of Research Interdisciplinary Graduate School of Medicine and Engineering, Enology and Crystal Science
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Committee career (2)：
2008/04 - 2010/03 独立行政法人大学評価・学位授与機構 学位審査会専門委員
2008/04 - 2010/03 応用物理学会 理事
Awards (1)：
1992 - 新機能素子研究開発協会研究開発功績賞受賞
Association Membership(s) (1)：
応用物理学会
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