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J-GLOBAL ID:200902151537717645   Reference number:01A0523888

Gallium Nitride Based High Power Heterojunction Field Effect Transistors: Process Development and Present Status at UCSB.

GaN系の高出力ヘテロ接合電界効果トランジスタ UCSBにおけるプロセス開発と現状
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Material:
Volume: 48  Issue:Page: 552-559  Publication year: Mar. 2001 
JST Material Number: C0222A  ISSN: 0018-9383  CODEN: IETDAI  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Transistors  ,  Semiconductor-semiconductor contacts with Gr.13-15 element compounds 

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