Art
J-GLOBAL ID：200902152506033701   Reference number：00A0292999

Interaction of hydrogen with the vacancy-oxygen pair produced in n-type silicon by electron irradiation.

電子照射によりn型シリコンに発生した空格子点-酸素対と水素との相互作用
Author (2)：
TOKUDA Y

About TOKUDA Y

(Aichi Inst. Technol., Toyota, JPN)

About Aichi Inst. Technol., Toyota, JPN

, 
SEKI T

About SEKI T

(Aichi Inst. Technol., Toyota, JPN)

About Aichi Inst. Technol., Toyota, JPN


Material：
Semiconductor Science and Technology  (Semicond Sci Technol)

About Semiconductor Science and Technology


Volume： 15  Issue： 2  Page： 126-129  Publication year： Feb. 2000 
JST Material Number： E0503B  ISSN： 0268-1242  CODEN： SSTEET  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
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*silicon

About silicon

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Lattice defects in semiconductors 
(BK12040Q)

About Lattice defects in semiconductors

,  Electronic structure of impurites and defects 
(BM02100I)

About Electronic structure of impurites and defects

Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
電子照射

About 電子照射

, 
N型シリコン

About N型シリコン

, 
空格子点

About 空格子点

, 
酸素

About 酸素

, 
水素

About 水素

, 
相互作用

About 相互作用


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