Room-temperature sharp line electroluminescence at λ=1.54μm from an erbium-doped, silicon light-emitting diode.

ZHENG B; MICHEL J; REN F Y G; KIMERLING L C; JACOBSON D C; POATE J M

Art

J-GLOBAL ID：200902153814282123 Reference number：94A0540254

Room-temperature sharp line electroluminescence at λ=1.54μm from an erbium-doped, silicon light-emitting diode.

エルビウムドープシリコン発光ダイオードからのλ=1.54μmにおける室温での鋭い線エレクトロルミネセンス

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Author (6)： , , , , ,
Material：
Volume： 64 Issue： 21 Page： 2842-2844 Publication year： May. 23, 1994
JST Material Number： H0613A ISSN： 0003-6951 CODEN： APPLAB Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Light emitting devices , Luminescence of semiconductors

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