Art

J-GLOBAL ID：200902153978852788   Reference number：01A0326526

Electrical and optical properties of boron and nitrogen implanted In₂O₃ thin films.

ほう素及び窒素を注入したIn₂O₃薄膜の電気及び光学特性

Author (6)： HANAMOTO K (Ritsumeikan Univ., Shiga, JPN) ,  SASASKI M (Industrial Res. Center of SHIGA Prefecture, Shiga, JPN) ,  MIYATANI K (Ritsumeikan Univ., Shiga, JPN) ,  KAITO C (Ritsumeikan Univ., Shiga, JPN) ,  MIKI H (Ritsumeikan Univ., Shiga, JPN) ,  NAKAYAMA Y (Ritsumeikan Univ., Shiga, JPN)
Material： Nuclear Instruments & Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms  (Nuclear Instruments and Methods in Physics Research. Section B. Beam Interactions with Materials and Atoms)
Volume： 173  Issue： 3  Page： 287-291  Publication year： Jan. 2001 
JST Material Number： H0899A  ISSN： 0168-583X  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： transference electrode ,...

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JST classification (1)： Oxide thin films  (BK14050P)

Terms in the title (5)： ほう素 ,  窒素 ,  注入 ,  薄膜 ,  光学特性