Art
J-GLOBAL ID：200902154396201673   Reference number：97A0329900

Growth of GaN Single Crystals and Properties of Homoepitaxial MOCVD Layers.

GaN単結晶の成長とホモエピタキシャルMOCVD層の特性
Author (2)：
BARANOWSKI J M

About BARANOWSKI J M

(High Pressure Res. Center, Polish Acad. Sci., Soklowska, POL)

About High Pressure Res. Center, Polish Acad. Sci., Soklowska, POL

, 
POROWSKI S

About POROWSKI S

(High Pressure Res. Center, Polish Acad. Sci., Soklowska, POL)

About High Pressure Res. Center, Polish Acad. Sci., Soklowska, POL


Material：
Semiconducting and Insulating Materials, 1996  (Semicond Insul Mater 1996)

About Semiconducting and Insulating Materials, 1996


Page： 77-84  Publication year： 1996 
JST Material Number： K19970144  ISBN： 0-7803-3095-1  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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gallium nitride

About gallium nitride

,...
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JST classification (1)：
JST classification
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Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
GaN

About GaN

, 
単結晶の成長

About 単結晶の成長

, 
ホモ

About ホモ

, 
エピタキシャル

About エピタキシャル

, 
MOCVD

About MOCVD


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