Over 300 GHz f<sub>T</sub> and f<sub>max</sub> InP/InGaAs Double Heterojunction Bipolar Transistors With a Thin Pseudomorphic Base.

IDA M; KURISHIMA K; WATANABE N

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J-GLOBAL ID：200902155373344015 Reference number：03A0159482

Over 300 GHz f_T and f_max InP/InGaAs Double Heterojunction Bipolar Transistors With a Thin Pseudomorphic Base.

f_Tとf_maxが300GHzを超す薄いpseudomorphicベースのInP/InGaAsダブルヘテロ接合バイポーラトランジスタ

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Volume： 23 Issue： 12 Page： 694-696 Publication year： Dec. 2002
JST Material Number： B0344B ISSN： 0741-3106 CODEN： EDLEDZ Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Over 300 GHz fT and fmax InP/InGaAs Double Heterojunction Bipolar Transistors With a Thin Pseudomorphic Base.

Over 300 GHz f_T and f_max InP/InGaAs Double Heterojunction Bipolar Transistors With a Thin Pseudomorphic Base.