Art

J-GLOBAL ID：200902155840033576   Reference number：01A0627466

Recent progress and current issues in SiC semiconductor devices for power applications.

電力応用用SiC半導体デバイスの最近の進歩と現状

Author (9)： JOHNSON C M (Univ. Newcastle, Newcastle upon Tyne, GBR) ,  WRIGHT N G (Univ. Newcastle, Newcastle upon Tyne, GBR) ,  UREN M J (Defence Res. and Evaluation Agency, Worcestershire, GBR) ,  HILTON K P (Defence Res. and Evaluation Agency, Worcestershire, GBR) ,  RAHIMO M (Semelab, Leicestershire, GBR) ,  HINCHLEY D A (Semelab, Leicestershire, GBR) ,  KNIGHTS A P (Univ. Surrey, Surrey, GBR) ,  ORTOLLAND S (Univ. Newcastle, Newcastle upon Tyne, GBR) ,  O'NEILL A G (Univ. Newcastle, Newcastle upon Tyne, GBR)
Material： IEE Proceedings. Circuits, Devices & Systems  (IEE Proc Circuits Devices Syst)
Volume： 148  Issue： 2  Page： 101-108  Publication year： Apr. 2001 
JST Material Number： A0160B  ISSN： 1350-2409  CODEN： ICDSE7  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： power electronics ,...

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JST classification (1)： Solic-state devices in general  (NC03010Z)

Terms in the title (4)： 電力応用 ,  SiC ,  半導体デバイス ,  現状