A structural interpretation of Si-O-Si vibrational absorption of high-photoconductive amorphous a-SiO<sub>x</sub>:H films.

HAGA K; WATANABE H

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J-GLOBAL ID：200902155975499281 Reference number：96A0430648

A structural interpretation of Si-O-Si vibrational absorption of high-photoconductive amorphous a-SiO_x:H films.

高光導電性アモルファスa-SiO_x:H膜のSi-O-Si振動吸収の構造解釈

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Volume： 195 Issue： 1/2 Page： 72-75 Publication year： Feb. 1996
JST Material Number： D0642A ISSN： 0022-3093 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Infrared and Raman spectra of inorganic molecules , Structure of amorphous semiconductors

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A structural interpretation of Si-O-Si vibrational absorption of high-photoconductive amorphous a-SiOx:H films.

A structural interpretation of Si-O-Si vibrational absorption of high-photoconductive amorphous a-SiO_x:H films.