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J-GLOBAL ID:200902156181860245   Reference number:01A0454588

Formation of a stratified lanthanum silicate dielectric by reaction with Si(001).

Si(001)との反応による層状けい酸ランタン誘電体の形成
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Volume: 78  Issue: 11  Page: 1607-1609  Publication year: Mar. 12, 2001 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Oxide thin films  ,  Metal-insulator-semiconductor structures 
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