GaAs and InP Nanohole Arrays Fabricated by Reactive Beam Etching Using Highly Ordered Alumina Membranes.

NAKAO M; OKU S; TAMAMURA T; YASUI K; MASUDA H

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J-GLOBAL ID：200902156794460398 Reference number：99A0355956

GaAs and InP Nanohole Arrays Fabricated by Reactive Beam Etching Using Highly Ordered Alumina Membranes.

高度に秩序化したアルミナ膜を用いた反応性ビームエッチングによるGaAsとInPナノホールアレイの製作

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Material：
Volume： 38 Issue： 2B Page： 1052-1055 Publication year： Feb. 28, 1999
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Manufacturing technology of solid-state devices

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(4) J.D. Joannopoulos, R.D. Meade and J.N. Winn: Photonic Crystals (Princeton Univ. Press, Princeton, 1995), and references therein.
(5) J.R. Wendt, G.A. Vawter, P.L. Gourley, T.M. Brennan and B.E. Hammons: J. Vac. Sci. & Tech. B 11 (1993) 2637.

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