Art
J-GLOBAL ID：200902156794460398
Reference number：99A0355956
GaAs and InP Nanohole Arrays Fabricated by Reactive Beam Etching Using Highly Ordered Alumina Membranes.
高度に秩序化したアルミナ膜を用いた反応性ビームエッチングによるGaAsとInPナノホールアレイの製作
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Author (5)：
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Material：
Volume：
38
Issue：
2B
Page：
1052-1055
Publication year：
Feb. 28, 1999
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Manufacturing technology of solid-state devices
Reference (14)：
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(1) H. Masuda and K. Fukuda: Science 268 (1995) 1466.
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(2) H. Masuda and M. Satoh: Jpn. J. Appl. Phys. 35 (1996) L126.
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(3) H. Masuda, H. Yamada, M. Satoh, H. Asoh, M. Nakao and T. Tamamura: Appl. Phys. Lett. 71 (1997) 2770.
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(4) J.D. Joannopoulos, R.D. Meade and J.N. Winn: Photonic Crystals (Princeton Univ. Press, Princeton, 1995), and references therein.
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(5) J.R. Wendt, G.A. Vawter, P.L. Gourley, T.M. Brennan and B.E. Hammons: J. Vac. Sci. & Tech. B 11 (1993) 2637.
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