Art
J-GLOBAL ID：200902159741570522
Reference number：02A0501689
Room Temperature Coulomb Diamond Characteristic of Single Electron Transistor Made by AFM Nano-Oxidation Process.
原子間力顕微鏡ナノ酸化プロセスで作製した単一電子トランジスタの室温のCoulombダイヤモンド特性
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Author (3)：
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Material：
Volume：
41
Issue：
4B
Page：
2578-2582
Publication year：
Apr. 30, 2002
JST Material Number：
G0520B
ISSN：
0021-4922
Document type：
Article
Article type：
原著論文
Country of issue：
Japan (JPN)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Electrical properties of interfaces in general
, Transistors
Reference (14)：
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1) K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai and K. Seki: Tech. Dig. Int. Electron Device Meet. (1993) p. 541.
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2) K. Nakazato, T. J. Thornton, J. White and H. Ahmed: Electronics Lett. 29 (1993) 384.
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3) Yu. A. Pashkin, Y. Nakamura and J. S. Tai: Appl. Phys. Lett. 76 (2000) 2256.
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4) J. Kong, C. Zhou, E. Yenilmez and H. Dai: Appl. Phys. Lett. 77 (2000) 3977.
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5) K. Matsumoto, M. Ishii, K. Segawa, Y. Oka, B. J. Vartanian and J. S. Harris: Appl. Phys. Lett. 68 (1996) 34.
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