Art
J-GLOBAL ID：200902160336637260   Reference number：97A0831024

Single-crystal Si field emitter fabricated by anodization.

陽極酸化法で製作した単結晶Siフィールドエミッタ
Author (3)：
HIGA K

About HIGA K

(Kyushu Inst. Technol., Fukuoka, JPN)

About Kyushu Inst. Technol., Fukuoka, JPN

, 
NISHII K

About NISHII K

(Kyushu Inst. Technol., Fukuoka, JPN)

About Kyushu Inst. Technol., Fukuoka, JPN

, 
ASANO T

About ASANO T

(Kyushu Inst. Technol., Fukuoka, JPN)

About Kyushu Inst. Technol., Fukuoka, JPN


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 71  Issue： 7  Page： 983-985  Publication year： Aug. 18, 1997 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
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silicon

About silicon

,...
Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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anodic oxidation

About anodic oxidation

,...
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Thermoionic emission and field emission 
(BM09020S)

About Thermoionic emission and field emission

,  Other solid-state devices 
(NC03150A)

About Other solid-state devices

Terms in the title (4)：
Terms in the title
Keywords automatically extracted from the title.
陽極酸化法

About 陽極酸化法

, 
製作

About 製作

, 
単結晶Si

About 単結晶Si

, 
フィールドエミッタ

About フィールドエミッタ


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