Art
J-GLOBAL ID：200902163172797901
Reference number：96A0876383
Ion-assisted Si/XeF2 etching: Temperature dependence in the range 100-1000K.
イオン促進型のSi/XeF2エッチング 100~1000K範囲の温度依存性
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Author (3)：
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Material：
Volume：
14
Issue：
5
Page：
2820-2826
Publication year：
Sep. 1996
JST Material Number：
C0789B
ISSN：
0734-2101
CODEN：
JVTAD6
Document type：
Article
Article type：
原著論文
Country of issue：
United States (USA)
Language：
ENGLISH (EN)
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JST classification (2)：
JST classification
Category name(code) classified by JST.
Applications of plasma
, Manufacturing technology of solid-state devices
Terms in the title (6)：
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