Art
J-GLOBAL ID:200902165562191608
Reference number:02A0501579
Indium Phosphide & Related Materials. Micro-Raman Characterization of Starting Material for Traveling Liquidus Zone Growth Method.
移動液相線ゾーン成長法の出発原料の顕微Raman特性評価
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Author (5):
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Material:
Volume:
41
Issue:
2B
Page:
991-995
Publication year:
Feb. 28, 2002
JST Material Number:
G0520B
ISSN:
0021-4922
Document type:
Article
Article type:
原著論文
Country of issue:
Japan (JPN)
Language:
ENGLISH (EN)
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JST classification (1):
JST classification
Category name(code) classified by JST.
Crystal growth of semiconductors
Reference (16):
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1) H. Kato, K. Kinoshita and S. Yoda: J. Jpn. Soc. Microgravity Appl. 15 (1998) 509.
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2) T. Suzuki, K. Nakajima, T. Kusunoki and T. Katoh: J. Electron. Mater. 25 (1996) 357.
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3) K. Nakajima, T. Kusunoki and K. Kuramata: Mater. Res. Soc. 281 (1993) 197.
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4) T. Kusunoki, C. Takenaka and K. Nakajima: J. Cryst. Growth 112 (1991) 33.
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5) S. Fujiwara, M. Tatsumi, T. Araki, M. Irikura, K. Matsumoto, S. Murai and T. Shirakawa: J. Assoc. Cryst. Growth 21 (1994) 411.
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