Investigation of SiO<sub>2</sub> deposition processes with mass spectrometry and optical emission spectroscopy in plasma enhanced chemical vapor deposition using tetraethoxysilane.

HORII N M; OKIMURA K; SHIBATA A

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J-GLOBAL ID：200902165650716427 Reference number：99A0694413

Investigation of SiO₂ deposition processes with mass spectrometry and optical emission spectroscopy in plasma enhanced chemical vapor deposition using tetraethoxysilane.

テトラエトキシシランを用いたプラズマ化学蒸着によるSiO₂堆積過程の質量分析と発光分析による研究

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Volume： 343/344 Page： 148-151 Publication year： Apr. 1999
JST Material Number： B0899A ISSN： 0040-6090 Document type： Article
Article type：原著論文 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Oxide thin films , Utilization for science and engineering

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Investigation of SiO2 deposition processes with mass spectrometry and optical emission spectroscopy in plasma enhanced chemical vapor deposition using tetraethoxysilane.

Investigation of SiO₂ deposition processes with mass spectrometry and optical emission spectroscopy in plasma enhanced chemical vapor deposition using tetraethoxysilane.