High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization.

HARA A; TAKEUCHI F; TAKEI M; SUGA K; YOSHINO K; CHIDA M; SANO Y; SASAKI N

Art

J-GLOBAL ID：200902166185513138 Reference number：02A0355800

High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization.

連続波レーザ横方向結晶化を利用した非アルカリガラス上の高性能多結晶シリコン薄膜トランジスタ

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Material：
Volume： 41 Issue： 3B Page： L311-L313 Publication year： Mar. 15, 2002
JST Material Number： F0599B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Transistors

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