Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices.

MATSUMOTO Y; HANAJIRI T; TOYABE T; SUGANO T

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J-GLOBAL ID：200902166444804057 Reference number：97A0775374

Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices.

単一電子素子の高密度集積に使う非対称トンネル障壁の優位性

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Material：
Volume： 36 Issue： 6B Page： 4143-4146 Publication year： Jun. 1997
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：原著論文 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor integrated circuit

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