TEM investigation of ion beam synthesized semiconducting FeSi<sub>2</sub>.

YANG Z; HOMEWOOD K P; REESON K J; FINNEY M S; HARRY M A

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J-GLOBAL ID：200902168079173657 Reference number：95A0629979

TEM investigation of ion beam synthesized semiconducting FeSi₂.

イオンビーム合成半導性FeSi₂のTEM研究

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Volume： 23 Issue： 4/6 Page： 215-220 Publication year： May. 1995
JST Material Number： E0935A ISSN： 0167-577X Document type： Article
Article type：短報 Country of issue： Netherlands (NLD) Language： ENGLISH (EN)

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Irradiational changes semiconductors

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TEM investigation of ion beam synthesized semiconducting FeSi2.

TEM investigation of ion beam synthesized semiconducting FeSi₂.