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J-GLOBAL ID:200902168079173657   Reference number:95A0629979

TEM investigation of ion beam synthesized semiconducting FeSi2.

イオンビーム合成半導性FeSi2のTEM研究
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Volume: 23  Issue: 4/6  Page: 215-220  Publication year: May. 1995 
JST Material Number: E0935A  ISSN: 0167-577X  Document type: Article
Article type: 短報  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Irradiational changes semiconductors 
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