Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition during Growth of Ge on Si(001).

VAILIONIS A; CHO B; GLASS G; DESJARDINS P; CAHILL D G; GREENE J E

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J-GLOBAL ID：200902168163339145 Reference number：01A0117340

Pathway for the Strain-Driven Two-Dimensional to Three-Dimensional Transition during Growth of Ge on Si(001).

Si(001)上のGe成長中に歪によって駆動される二次元から三次元への転移に対する径路

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Material：
Volume： 85 Issue： 17 Page： 3672-3675 Publication year： Oct. 23, 2000
JST Material Number： H0070A ISSN： 0031-9007 CODEN： PRLTAO Document type： Article
Article type：短報 Country of issue： United States (USA) Language： ENGLISH (EN)

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Semiconductor thin films

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