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J-GLOBAL ID:200902168749127449   Reference number:97A0868711

Growth of ZnO Thin Film by Laser MBE: Lasing of Exciton at Room Temperature.

レーザMBEによるZnO薄膜成長 室温での励起子レーザ発振
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Volume: 202  Issue:Page: 669-672  Publication year: Aug. 01, 1997 
JST Material Number: C0599A  ISSN: 0370-1972  Document type: Article
Article type: 原著論文  Country of issue: Germany, Federal Republic of (DEU)  Language: ENGLISH (EN)
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Semiconductor thin films  ,  Luminescence of semiconductors  ,  Semiconductor lasers 
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