Art
J-GLOBAL ID：200902169912926482   Reference number：98A0278435

A new buffer layer for high quality GaN growth by metalorganic vapor phase epitaxy.

有機金属気相エピタクシーによって成長させた高品質GaNのための新しいバッファ層
Author (4)：
KACHI T

About KACHI T

(Toyota Central Res. & Dev. Lab., Inc., Aichi, JPN)

About Toyota Central Res. & Dev. Lab., Inc., Aichi, JPN

, 
TOMITA K

About TOMITA K

(Toyota Central Res. & Dev. Lab., Inc., Aichi, JPN)

About Toyota Central Res. & Dev. Lab., Inc., Aichi, JPN

, 
ITOH K

About ITOH K

(Toyota Central Res. & Dev. Lab., Inc., Aichi, JPN)

About Toyota Central Res. & Dev. Lab., Inc., Aichi, JPN

, 
TADANO H

About TADANO H

(Toyota Central Res. & Dev. Lab., Inc., Aichi, JPN)

About Toyota Central Res. & Dev. Lab., Inc., Aichi, JPN


Material：
Applied Physics Letters  (Appl Phys Lett)

About Applied Physics Letters


Volume： 72  Issue： 6  Page： 704-706  Publication year： Feb. 09, 1998 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)
Thesaurus term：
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Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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*gallium nitride

About gallium nitride

,...
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JST classification (1)：
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
(BK14040E)

About Semiconductor thin films

Terms in the title (5)：
Terms in the title
Keywords automatically extracted from the title.
有機金属気相エピタクシー

About 有機金属気相エピタクシー

, 
成長

About 成長

, 
高品質

About 高品質

, 
GaN

About GaN

, 
バッファ層

About バッファ層


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