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J-GLOBAL ID:200902170174711989   Reference number:00A0882337

環境半導体 半導体鉄シリサイドバルク結晶の溶液成長

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Volume: 37  Issue:Page: 34-38  Publication year: Jan. 20, 2000 
JST Material Number: G0788A  ISSN: 0388-3930  Document type: Article
Article type: 解説  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Crystal growth of semiconductors 
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